Title :
A Detailed Failure Analysis Examination of the Effect of Thermal Cycling on Cu TSV Reliability
Author :
Okoro, Chukwudi ; Lau, John W. ; Golshany, Fardad ; Hummler, Klaus ; Obeng, Yaw S.
Author_Institution :
Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
In this paper, the reliability of through-silicon via (TSV) daisy chains under thermal cycling conditions was examined. The electrical resistance of TSV daisy chains was found to increase with the number of thermal cycles, due to thermally induced damage leading to the formation and growth of defects. The contributions of each identified damage type to the change in the electrical resistance of the TSV chain were evaluated by electrical modeling. Thermo-mechanical modeling showed a good correlation between the observed damage locations and the simulated stress-concentration regions of the TSV.
Keywords :
copper; failure analysis; finite element analysis; integrated circuit modelling; integrated circuit reliability; three-dimensional integrated circuits; Cu; TSV daisy chains; TSV reliability; failure analysis; finite element analysis; thermal cycles; thermal cycling; thermo-mechanical modeling; through silicon via; Failure analysis; Metallization; Stress; Thermal analysis; Thermal resistance; Through-silicon vias; Failure analysis; finite element analysis; three-dimensional integrated circuits; through-silicon vias;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2291297
