DocumentCode :
1052040
Title :
High-Quality 
MIM Capacitors for RF Applications
MIM Capacitors for RF ApplicationsAuthor :
Wenger, Ch. ; Lippert, G. ; Sorge, R. ; Schroeder, T. ; Mane, A.U. ; Lupina, G. ; Dabrowski, J. ; Zaumseil, P. ; Fan, X. ; Oberbeck, L. ; Schroeder, U. ; Müssig, H.J.
Author_Institution :
IHP, Frankfurt
Volume :
53
Issue :
8
fYear :
2006
Firstpage :
1937
Lastpage :
1939
Abstract :
The electrical characteristics of layered Al2O3 /Pr2O3/Al2O3 metal-insulator-metal (MIM) capacitors for RF device applications are presented for the first time. This advanced dielectric layer system 4-nm Al2O3/8-nm Pr2O3/4-nm Al2O3 shows a high capacitance density of 5.7 fF/mum2, a low leakage current density of 5times10-9 A/cm2 at 1 V, and an excellent dielectric loss behavior over the studied frequency range
Keywords :
MIM devices; aluminium compounds; capacitors; dielectric materials; electric properties; leakage currents; praseodymium compounds; 1 V; 4 nm; 8 nm; Al2O3-Pr2O3-Al2 O3; RF device applications; dielectric layer system; dielectric loss behavior; electrical characteristics; high capacitance density; leakage current density; metal-insulator-metal capacitors; Aluminum oxide; Capacitance; Dielectric loss measurement; Dielectric losses; Electric variables; High K dielectric materials; High-K gate dielectrics; Leakage current; MIM capacitors; Radio frequency; Capacitor; high-; metal–insulator–metal (MIM); thin-film devices; voltage linearity;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2006.877870
Filename :
1661898
Link To Document :
