Room to High Temperature Measurements of Flexible SOI FinFETs With Sub-20-nm Fins

Author

Diab, A. ; Torres Sevilla, G.A. ; Cristoloveanu, S. ; Hussain, M.M.

Author_Institution

Dept. of Electr. EngineeringIntegrated Nanotechnol. Lab., King Abdullah Univ. of Sci. & Technol., Jeddah, Saudi Arabia

Volume

61

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

3978

Lastpage

3984

Abstract

We report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field-effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k/metal gate-stacks. For the first time, we characterize them from room to high temperature (150 °C) to show the impact of temperature variation on drain current, gate leakage current, and transconductance. Variation of extracted parameters, such as low-field mobility, subthreshold swing, threshold voltage, and ON-OFF current characteristics, is reported too. Direct comparison is made to a rigid version of the SOI FinFETs. The mobility degradation with temperature is mainly caused by phonon scattering mechanism. The overall excellent devices performance at high temperature after release is outlined proving the suitability of truly high-performance flexible inorganic electronics with such advanced architecture.

Keywords

MOSFET; flexible electronics; silicon-on-insulator; temperature measurement; core electrical parameters; drain current; field effect transistor; flexible SOI FinFET; flexible inorganic electronics; gate leakage current; low field mobility; mobility degradation; phonon scattering mechanism; silicon on insulator; subthreshold swing; temperature 150 degC; temperature measurements; threshold voltage; transconductance; transport characteristics; FinFETs; Leakage currents; Logic gates; Substrates; Temperature; Temperature measurement; FinFET; flexible; gate leakage; high temperature; mobility; silicon-on-insulator (SOI); silicon-on-insulator (SOI).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2360659

Filename

6920080