Title :
Overview of CCD memory
Author :
Terman, Lewis M. ; Heller, Lawrence G.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
fDate :
2/1/1976 12:00:00 AM
Abstract :
This paper summarizes the status and potential of charge-coupled device (CCD) memories. Cost-performance tradeoffs for serial memories are reviewed, and the CCD chip organizations for slow and fast access systems are discussed. Comparisons are made between CCD and MOS random access memory (RAM) chips on the basis of cell area, support circuits, cell operation, and technology.
Keywords :
Charge coupled devices; Cost function; Coupling circuits; Delay; Helium; Random access memory; Read-write memory; Solid state circuits; System performance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18355
