DocumentCode
1052158
Title
Direct bonding of recessed-structure SAW filter on silicon substrate
Author
Tsai, Shih-Hung ; Wang, Na-Fu ; Horng, Jui-Hong ; Houng, Mau-Phon ; Wang, Yeong-Her
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
51
Issue
7
fYear
2004
fDate
7/1/2004 12:00:00 AM
Firstpage
913
Lastpage
916
Abstract
A procedure for fabricating a recessed surface acoustic wave (SAW) device coupled with silicon substrate is reported. The recessed structure is stable and rugged enough against the bonding process, and it can be applied to integrate a semiconductor device into one chip by a direct bonding technique. In this paper, the tensile strength of silicon (Si)-to-recessed-SAW filter is measured, and the performance of the device is discussed.
Keywords
bonding processes; lithium compounds; piezoelectric materials; surface acoustic wave filters; tensile strength; Si-LiNbO/sub 3/; chip scale integration; direct bonding process; recessed structure SAW filter; recessed surface acoustic wave device; semiconductor device integration; silicon substrate; tensile strength; Bonding; Fabrication; Ocean temperature; SAW filters; Sea surface; Semiconductor devices; Silicon; Substrates; Surface contamination; Surface treatment;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/TUFFC.2004.1320752
Filename
1320752
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