• DocumentCode
    1052185
  • Title

    The charge-coupled RAM cell concept

  • Author

    Tasch, Al F., Jr. ; Frye, Robert C. ; Fu, Horng-Sen

  • Author_Institution
    Texas Instruments, Inc., Dallas, TX
  • Volume
    23
  • Issue
    2
  • fYear
    1976
  • fDate
    2/1/1976 12:00:00 AM
  • Firstpage
    126
  • Lastpage
    131
  • Abstract
    A new concept in MOS dynamic RAM cells is described and demonstrated. The charge-coupled RAM (CC RAM) cell combines the storage capacity and transfer gate of the one-transistor cell into a single gate. The resulting cell is simpler than the conventional one-transistor cell and possesses significant advantages in packing density and potentially higher yield. One of the variations of the CC RAM cell concept results in a cell whose operation is identical (voltage and timing) to that of the present one-transistor cell. In addition, the CC RAM cell fabrication is essentially the same as the present one-transistor cell process. The CC RAM is an attractive candidate for the next generation RAM´s.
  • Keywords
    Channel bank filters; Conductivity; DRAM chips; Dielectric constant; Dielectric materials; Doping; Implants; Material storage; Timing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18362
  • Filename
    1478376