• DocumentCode
    1052196
  • Title

    The Influence of TiN Thickness and \\hbox {SiO}_{2} Formation Method on the Structural and Electrical Properties of $(hbox{HfO}_{2})$; high- $kappa$ dielectrics; interfacial oxide;

  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2009.2021718
  • Filename
    5061882