DocumentCode :
1052196
Title :
The Influence of TiN Thickness and \\hbox {SiO}_{2} Formation Method on the Structural and Electrical Properties of $(hbox{HfO}_{2})$; high- $kappa$ dielectrics; interfacial oxide;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2021718
Filename :
5061882
Link To Document :
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