Electrodeposited films with island structure Ni-Co layers

An island structure Ni-Co layer is deposited from a complexing bath containing glycine as a ligand agent. For multilayered films with this layer, it is shown that the Ni-Co islands are important to obtain a fluctuation of local anisotropy. Clear correlations are found among various parameters to evaluate memory characteristics of magnetic films. Especially, it is shown that it is possible to explain theoretically the correlation between write threshold and digit disturb threshold. The NDRO quality is strongly dependent on the fluctuation of local anisotropy. The island structure deposits are shown to be determined by a positively charged complex ion in the bath.