• DocumentCode
    1052278
  • Title

    Charge-coupled device and charge-injection device imaging

  • Author

    Barbe, David F.

  • Author_Institution
    Naval Research Laboratory, Washington, DC
  • Volume
    23
  • Issue
    2
  • fYear
    1976
  • fDate
    2/1/1976 12:00:00 AM
  • Firstpage
    177
  • Lastpage
    182
  • Abstract
    A brief review is given of the advances in solid-state imaging during the last ten years. The issues of surface channel versus buried channel, aliasing versus prefiltering, frame transfer (FT) versus interline transfer (IT) versus charge-injection device (CID), and direct view versus EBIC imaging are discussed. Time-delay-and-integration (TDI) and infrared imaging are discussed. Finally applications are considered.
  • Keywords
    Charge coupled devices; Clocks; Electron traps; Frequency; Infrared imaging; Noise level; Optical arrays; Optical imaging; Semiconductor device noise; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18371
  • Filename
    1478385