• DocumentCode
    1052283
  • Title

    Silicon-based microelectrodes for neurophysiology fabricated using a gold metallization/nitride passivation system

  • Author

    Ensell, Graham ; Banks, Danny J. ; Ewins, David J. ; Balachandran, W. ; Richards, Peter R.

  • Author_Institution
    Dept. of Electron. & Comput. Sci., Southampton Univ., UK
  • Volume
    5
  • Issue
    2
  • fYear
    1996
  • fDate
    6/1/1996 12:00:00 AM
  • Firstpage
    117
  • Lastpage
    121
  • Abstract
    The multimicroelectrode probe (microprobe) is a device used in neurophysiology to record signals from nerve cells. Microprobes typically have a number of gold recording sites supported on a narrow cantilever beam which is inserted into the tissue. Conducting tracks connect the recording sites to bonding pads on the body of the device. The metallization is insulated, except at the recording sites and bonding pads, by a passivation layer. Boron etch stop techniques can be used to produce narrow cantilever beams upon which recording sites are situated. Previously, polysilicon interconnects were used on microprobes fabricated using boron etch stop techniques, with gold inlaid onto the recording sites using a lift-off technique. This meant that mechanical jigging was required before the final shaping of the probes in potassium hydroxide (or other etch) to prevent the etch from attacking the polysilicon conductors beneath the inlaid gold. The process reported here incorporates a gold metallization layer, in conjunction with a plasma-enhanced chemical vapor deposition (PECVD) nitride passivation layer. Since both these materials etch very slowly in potassium hydroxide, no mechanical jigging, or other steps, need to be taken to protect the front of the wafer during the shaping stage. This simplifies the fabrication of these devices
  • Keywords
    biomedical equipment; biomedical measurement; chemical vapour deposition; elemental semiconductors; etching; gold; microelectrodes; microsensors; neurophysiology; passivation; plasma CVD; semiconductor device metallisation; signal detection; silicon; Au; KOH; NO3; PECVD; Si; Si microelectrodes; Si:B; boron etch stop; cantilever beam; conducting tracks; etching; fabrication; gold metallization; mechanical jigging; mesa; microprobe; multimicroelectrode probe; nerve cells; neurophysiology; nitride passivation; passivation layer; plasma-enhanced chemical vapor deposition; polysilicon; polysilicon conductors; potassium hydroxide; shaping; Bonding; Boron; Etching; Gold; Metallization; Microelectrodes; Neurophysiology; Passivation; Probes; Structural beams;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/84.506199
  • Filename
    506199