Analytical Extraction of a Schottky Diode Model From Broadband S-Parameters

Author

Aik Yean Tang ; Drakinskiy, Vladimir ; Yhland, K. ; Stenarson, J. ; Bryllert, Tomas ; Stake, Jan

Author_Institution

Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden

Volume

61

Issue

5

fYear

2013

fDate

May-13

Firstpage

1870

Lastpage

1878

Abstract

We present an analytic method to extract Schottky diode parasitic model parameters. All the ten unknown model parameters are extracted via a straightforward step-by-step procedure. The challenges for a proper finger inductance and series resistance extraction are discussed and solutions are recommended. The proposed method is evaluated using three sets of S-parameter data for GaAs-based planar Schottky diodes, i.e., data from measurement up to 110 GHz and 3-D electromagnetic full-wave simulations up to 600 GHz. The extracted models agree well with the measured and simulated data.

Keywords

III-V semiconductors; S-parameters; Schottky diodes; gallium arsenide; 3D electromagnetic full-wave simulation; GaAs; GaAs-based planar Schottky diode; Schottky diode parasitic model; broadband S-parameter; inductance; series resistance extraction; Analytical models; Capacitance; Integrated circuit modeling; Junctions; Mathematical model; Resistance; Schottky diodes; Analytical model; Schottky diodes; equivalent circuits; millimeter-wave devices; modeling; multibias; parameter extraction; scattering parameters; terahertz;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2013.2251655

Filename

6485005