Electro-Optical Modulation Processes in Si-PMOSFET LEDs Operating in the Avalanche Light Emission Mode

In this paper, the switching characteristics as associated with p + n gated MOSFET silicon LED are reviewed. By employing the insulated-gate terminal, which allows the adjustment of P⁺ source/drain to N-substrate junction breakdown voltage, it is demonstrated that the electro-optical modulation in the Si-PMOSFET device operates as gate-controlled diodes. The PMOSFET device can operate as a Si-diode LED or an Si gate-controlled diode LED. The main features of switching transitions of Si-diode LED and Si gate-controlled diode LED are characterized, and a model is developed to explain the modulation speed, which is then reviewed. The upper limit derived value for the expected maximum modulation of the device could be in the range of a few hundred GHz. According to the best of my knowledge, despite the low efficiency, the Si-PMOSFET light-emitting device will be a potentially key component for silicon photonic integrated circuits for future computing I/O applications.