DocumentCode
1052411
Title
Simulation of temperature and bias dependencies of β and V TO of GaAs MESFET devices
Author
Rodriguez-Tellez, J. ; Stothard, B P
Author_Institution
Dept, of Electron. & Electr. Eng., Bradford Univ., UK
Volume
40
Issue
10
fYear
1993
fDate
10/1/1993 12:00:00 AM
Firstpage
1730
Lastpage
1735
Abstract
A DC and temperature-nonlinear GaAs MESFET device model is presented. It offers improved accuracy over existing models by simulating the bias dependency of the device transconductance (β) and pinch-off point (V TO) parameters. The effect of these bias dependencies becomes more important as the temperature departs from room temperature. Expressions for simulating the temperature dependency of V TO and β are presented and provide improved accuracy over existing techniques. The model effectively couples the bias and temperature dependency of the devices
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; MESFET devices; bias dependencies; device model; pinch-off point; temperature dependencies; transconductance; Circuit noise; Circuit simulation; Coupling circuits; Diodes; FETs; Gallium arsenide; MESFETs; Temperature dependence; Temperature measurement; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.277327
Filename
277327
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