Thermally excited silicon oxide beam and bridge resonators in CMOS technology

Author

Brand, Oliver ; Baltes, Henry ; Baldenweg, Urs

Author_Institution

Phys. Electron. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

40

Issue

10

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

1745

Lastpage

1753

Abstract

The design, fabrication, and characterization of thermally excited silicon oxide beam and bridge resonators by a modern industrial CMOS process combined with one additional maskless etching step is reported. The resonant frequencies, vibration amplitudes, and mode shapes of the devices are measured using a laser heterodyne interferometer. The acoustic transmitting and receiving sensitivities of the resonant structures in air are investigated in order to test their possible application as ultrasound transducers for proximity sensing. The experimental results are compared with finite element simulations using ANSYS

Keywords

CMOS integrated circuits; dielectric resonators; etching; finite element analysis; ultrasonic transducers; ANSYS; CMOS technology; SiO_x; beam resonators; bridge resonators; finite element simulations; laser heterodyne interferometer; maskless etching step; mode shapes; proximity sensing; receiving sensitivities; resonant frequencies; thermally excited silicon oxide; transmitting sensitivities; ultrasound transducers; vibration amplitudes; Acoustic beams; Bridges; CMOS process; Laser beams; Laser excitation; Optical device fabrication; Shape measurement; Silicon; Textile industry; Vibration measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.277330

Filename

277330