Filament formation and the final resistance modeling in amorphous-silicon vertical programmable element

Author

Shacham-Diamand, Yosi

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

40

Issue

10

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

1780

Lastpage

1788

Abstract

Recent results on an amorphous-silicon vertical programmable element (PEL) made by ion implantation of single crystal silicon are presented. This device has already been demonstrated in 4 K and 16 K memory designs and EPGAs. It can be incorporated within conventional PMOS, NMOS, CMOS, bipolar, and BiCMOS designs. Its preprogrammed resistance exceeds 10⁷ Ω, while its postprogrammed resistance can be 1 kΩ or lower. The ion-implanted programmable element (IPEL) and other vertical fuses offer unique features like a long retention time at elevated temperatures and very small footprint. They can be scaled down to nanoelectronics circuits with functional density exceeding 10⁹ devices/cm²

Keywords

BiCMOS integrated circuits; EPROM; MOS integrated circuits; amorphous semiconductors; bipolar integrated circuits; ion implantation; logic arrays; silicon; BiCMOS; CMOS; EPGAs; NMOS; PMOS; Si; bipolar; final resistance modeling; footprint; functional density; ion implantation; ion-implanted programmable element; nanoelectronics circuits; postprogrammed resistance; preprogrammed resistance; retention time; vertical fuses; vertical programmable element; Amorphous materials; Amorphous silicon; Breakdown voltage; Crystallization; Electric resistance; Electrothermal effects; Fuses; Glass; Heating; Insulation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.277334

Filename

277334