Title :
Integrated 22 GHz low-phase-noise VCO with digital tuning in SiGe BiCMOS technology
Author :
Osmany, S.A. ; Herzel, F. ; Scheytt, J. Christoph ; Schmalz, K. ; Winkler, Wolfgang
Author_Institution :
IHP, Frankfurt
Abstract :
A fully integrated voltage-controlled oscillator (VCO) with a 17% tuning range and a low phase noise fabricated in a 0.25 mum SiGe BiCMOS technology is presented. To achieve a wide tuning range while keeping a low gain (KVCO), the VCO has 16 bands selectable by a 4-bit digital control. Coarse tuning is achieved using MOSFET varactors in a digital manner, which reduces the loss in the resonator. The measured phase noise is -111 dBc/Hz at 1 MHz offset from a 22 GHz carrier. This phase noise level is believed to be the lowest reported so far for an integrated silicon-based VCO in the 20-30 GHz frequency band.
Keywords :
BiCMOS digital integrated circuits; MOSFET; varactors; voltage-controlled oscillators; BiCMOS technology; MOSFET varactors; SiGe; digital control; digital tuning; frequency 1 MHz; frequency 20 GHz to 30 GHz; frequency 22 GHz; fully integrated voltage-controlled oscillator; integrated silicon-based VCO; low-phase-noise VCO;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20092924