• DocumentCode
    1052586
  • Title

    Raman lasers in silicon photonic wires: unidirectional ring lasing versus Fabry-Perot lasing

  • Author

    Krause, Markus ; Renner, Herwig ; Brinkmeyer, Ernst

  • Author_Institution
    Tech. Univ. Hamburg-Harburg, Hamburg
  • Volume
    45
  • Issue
    1
  • fYear
    2009
  • Firstpage
    42
  • Lastpage
    43
  • Abstract
    Integrated-optical silicon Raman lasers based on a ring cavity can potentially operate unidirectionally owing to the strong non-reciprocity of the Raman gain in submicron photonic wires. This makes the ring-cavity structure significantly more efficient than the alternative Fabry-Perot structure, in which the less efficient of the two propagation directions is unavoidably involved.
  • Keywords
    Fabry-Perot resonators; Raman lasers; elemental semiconductors; integrated optics; laser beams; laser cavity resonators; ring lasers; semiconductor lasers; silicon; Fabry-Perot lasing; Raman gain; Si; integrated-optical Raman laser; propagation direction; silicon photonic wires; unidirectional ring lasing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20093136
  • Filename
    4733097