• DocumentCode
    1052596
  • Title

    −40°C<T<95° C mode-hop-free operation of uncooled AlGaInAs-MQW discrete-mode laser diode with emission at λ=1.3 µm

  • Author

    Phelan, R. ; Kelly, B. ; O´Carroll, J. ; Herbert, C. ; Duke, A. ; O´Gorman, James

  • Author_Institution
    Eblana Photonics Ltd., Dublin
  • Volume
    45
  • Issue
    1
  • fYear
    2009
  • Firstpage
    43
  • Lastpage
    45
  • Abstract
    Discrete-mode lasers fabricated in the AlGaInAs/InP multiple quantum well (MQW) system and emitting around lambda=1.3 mum operate efficiently at high temperatures and exhibit mode-hop-free singlemode operation in the temperature, T, range -40degC<T<95degC.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser modes; optical fabrication; quantum well lasers; AlGaInAs-InP; MQW discrete-mode laser diode; discrete-mode laser fabrication; mode-hop-free operation; multiple quantum well system; temperature -40 degC to 95 degC; wavelength 1.3 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20092208
  • Filename
    4733098