DocumentCode
1052607
Title
A new approach to the simulation of small-signal current gains of pnpn structures
Author
Hátle, M. ; Vobecký, J.
Author_Institution
Dept. of Microelectron., Czech Tech. Univ. of Prague, Czechoslovakia
Volume
40
Issue
10
fYear
1993
fDate
10/1/1993 12:00:00 AM
Firstpage
1864
Lastpage
1866
Abstract
An approach to the mathematical simulation of small-signal current gains (alphas) versus frequency that respects Fulop´s measuring procedure is proposed, using an arrangement close to the real measuring circuit. For this purpose, an exact 1-D mathematical model is used. The dependence of small-signal alphas on the anode current of a high power thyristor (GTO) was found to be in agreement with measurements for low anode-to-cathode voltage
Keywords
amplification; semiconductor device models; simulation; thyristors; 1D model; Fulop´s measuring procedure; GTO; anode current; anode-to-cathode voltage; frequency; high power thyristor; mathematical simulation; p-n-p-n structures; pnpn structures; small-signal alphas; small-signal current gains; Anodes; Circuit simulation; Computational modeling; Current measurement; Doping profiles; Frequency measurement; Gain measurement; Mathematical model; Thyristors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.277345
Filename
277345
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