• DocumentCode
    1052628
  • Title

    Inas-based interband cascade lasers near 6 μm

  • Author

    Tian, Zhao ; Yang, R.Q. ; Mishima, T.D. ; Santos, M.B. ; Hinkey, R.T. ; Curtis, M.E. ; Johnson, M.B.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Univ. of Oklahoma, Norman, OK
  • Volume
    45
  • Issue
    1
  • fYear
    2009
  • Firstpage
    48
  • Lastpage
    49
  • Abstract
    Broad-area interband cascade lasers have been demonstrated on an InAs substrate and at emission wavelengths near 6 mum at temperatures up to 150 K in continuous-wave mode. The emission wavelengths are the longest achieved among III-V interband diode lasers. The threshold current density and voltage are about 50 A/cm2 and 2.4 V, respectively, at 82 K.
  • Keywords
    III-V semiconductors; indium compounds; semiconductor lasers; InAs; broad-area interband cascade lasers; continuous-wave mode; interband diode lasers; temperature 82 K; voltage 2.4 V; wavelength 6 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20092779
  • Filename
    4733101
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1052628