Title :
Inas-based interband cascade lasers near 6 μm
Author :
Tian, Zhao ; Yang, R.Q. ; Mishima, T.D. ; Santos, M.B. ; Hinkey, R.T. ; Curtis, M.E. ; Johnson, M.B.
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Oklahoma, Norman, OK
Abstract :
Broad-area interband cascade lasers have been demonstrated on an InAs substrate and at emission wavelengths near 6 mum at temperatures up to 150 K in continuous-wave mode. The emission wavelengths are the longest achieved among III-V interband diode lasers. The threshold current density and voltage are about 50 A/cm2 and 2.4 V, respectively, at 82 K.
Keywords :
III-V semiconductors; indium compounds; semiconductor lasers; InAs; broad-area interband cascade lasers; continuous-wave mode; interband diode lasers; temperature 82 K; voltage 2.4 V; wavelength 6 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20092779
