Title :
Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy
Author :
Zhou, Dizhi ; Piron, R. ; Dontabactouny, M. ; Dehaese, O. ; Grillot, F. ; Batte, Thomas ; Tavernier, Karine ; Even, J. ; Loualiche, S.
Author_Institution :
CNRS, INSA-Rennes, Rennes
Abstract :
Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225 A/cm2 (~45 A/cm2 per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52 K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.
Keywords :
III-V semiconductors; current density; indium compounds; laser beams; laser cavity resonators; molecular beam epitaxial growth; quantum dash lasers; semiconductor growth; InAs-InP; barrier region; carrier leakage; energy inhomogeneous broadening; five-stack laser structure; infinite cavity length; low-threshold current density; molecular beam epitaxy; optimised double-cap technique; quantum dash laser; temperature 52 K; waveguide region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20093066
