• DocumentCode
    1052683
  • Title

    Characterization of current transport of narrow-base bipolar transistors by the regional approach

  • Author

    Sirsi, R.M. ; Boothroyd, A.R.

  • Author_Institution
    Northern Electric Co., Ottawa, Canada
  • Volume
    23
  • Issue
    3
  • fYear
    1976
  • fDate
    3/1/1976 12:00:00 AM
  • Firstpage
    368
  • Lastpage
    370
  • Abstract
    It is demonstrated that the Ic-VBEtransport characteristics of a narrow-base bipolar transistor can be accurately computed using the regional approach if an appropriate characterization of the effects of mobile carriers in the emitter space-charge region is employed, but that neglect of such effects can lead to serious errors. A new method of approximate analysis for a linearly graded p-n junction is utilized for this purpose, giving results that are in close agreement with those of full computer simulation of the device structure.
  • Keywords
    Analytical models; Bipolar transistors; Current density; Electron emission; Equations; Manufacturing; Mobile computing; P-n junctions; Space charge; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18409
  • Filename
    1478423
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1052683