DocumentCode :
1052695
Title :
Effect of Residual Stress and Sidewall Emission of InGaN-Based LED by Varying Sapphire Substrate Thickness
Author :
Lee, Jae-Hoon ; Kim, Nam Seung ; Lee, Dong Yul ; Lee, Jung-Hee
Author_Institution :
LS Div., Samsung LED Co., Ltd., Suwon, South Korea
Volume :
21
Issue :
16
fYear :
2009
Firstpage :
1151
Lastpage :
1153
Abstract :
The effect of residual stress and the sidewall emission in InGaN-GaN films with different thickness of sapphire substrate were investigated. The peak wavelength of electroluminescence was blue-shifted as thinning the sapphire substrate, because the wafer bowing-induced mechanical stress alters the piezoelectric field in the InGaN-GaN multiple quantum-well active region of the light-emitting diode (LED). A sideview LED with 170-mum -thick sapphire exhibited the highest output power of 14.04 mW at a forward current of 20 mA, improved by 7% compared to that with 80-mum-thick sapphire. The maximum output power can be obtained by considering both the photon escaping probability from the edges of the sapphire and the photon absorption probability in the sapphire as well as the residual mechanical stress induced by the wafer bowing.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; semiconductor thin films; InGaN-GaN; electroluminescence; light-emitting diode; mechanical stress; photon absorption; residual mechanical stress; residual stress; sidewall emission; Bowing; GaN; light-emitting diode (LED); piezoelectric field; residual stress; sapphire thickness; sidewall emission;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2023331
Filename :
5062282
Link To Document :
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