Title :
Measurement of the electron drift velocity in avalanching GaAs diodes
Author :
Okamoto, H. ; Ikeda, M.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
fDate :
3/1/1976 12:00:00 AM
Abstract :
The scattering-limited drift velocity vsnof electrons in an avalanching GaAs diode is estimated by measuring the space-charge resistance. The result shows a lower value of vsn(5.7 ± 0.3) × 106cm/s than the generally accepted value 8 × 106cm/s at room temperature. The temperature dependence of vsnis also measured.
Keywords :
Charge carrier processes; Electric breakdown; Electrical resistance measurement; Electron mobility; Gallium arsenide; Poisson equations; Scattering; Schottky diodes; Temperature dependence; Velocity measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18411
