• DocumentCode
    1052732
  • Title

    500 GHz cutoff frequency SiGe HBTs

  • Author

    Zerounian, N. ; Aniel, F. ; Barbalat, B. ; Chevalier, P. ; Chantre, A.

  • Author_Institution
    Univ. Paris-Sud, Orsay
  • Volume
    43
  • Issue
    14
  • fYear
    2007
  • Abstract
    A current gain cutoff frequency fT of 508 GHz is reported for a SiGe heterojunction bipolar transistor (HBT) operating at 40 K. This 63% increase over the 311 GHz value measured at room temperature results from the overall decrease of the transit and charging times. Two HBTs are compared to highlight the importance of the topology of the HBT to reach maximum performances.
  • Keywords
    amplification; heterojunction bipolar transistors; SiGe; SiGe heterojunction bipolar transistor; current gain cutoff frequency; frequency 311 GHz; frequency 508 GHz;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070994
  • Filename
    4271361
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1052732