DocumentCode
1052748
Title
Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications
Author
Ashley, T. ; Buckle, L. ; Datta, S. ; Emeny, M.T. ; Hayes, D.G. ; Hilton, K.P. ; Jefferies, R. ; Martin, T. ; Phillips, T.J. ; Wallis, D.J. ; Wilding, P.J. ; Chau, R.
Author_Institution
QinetiQ, Malvern
Volume
43
Issue
14
fYear
2007
Abstract
The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85 nm gate length FETs with fT = 305 GHz at Vds = 0.5 V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8 mum thick. An initial step towards integrating InSb FETs with mainstream Si CMOS for high-speed energy-efficient logic applications has been achieved.
Keywords
III-V semiconductors; field effect transistors; indium compounds; low-power electronics; quantum well devices; silicon; InSb; Si; field effect transistors; frequency 305 GHz; logic applications; quantum well transistors; size 1.8 mum; size 85 nm; voltage 0.5 V;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20071335
Filename
4271363
Link To Document