• DocumentCode
    1052758
  • Title

    SOI MOSFET effective channel mobility

  • Author

    Sherony, Melanic J. ; Su, Lisa T. ; Chung, James E. ; Antoniadis, Dimitri A.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • Volume
    41
  • Issue
    2
  • fYear
    1994
  • fDate
    2/1/1994 12:00:00 AM
  • Firstpage
    276
  • Lastpage
    278
  • Abstract
    The standard bulk MOSFET definition for effective electric field is modified for SOI devices to account for nonzero electric field at the back oxide interface. The effective channel mobility in fully-depleted n-channel SOI MOSFET´s is shown to be independent of applied backgate bias when the modified Eeff definition is used. The effective channel mobility as a function of Eeff is also shown to be independent of film thickness for fully-depleted devices
  • Keywords
    SIMOX; carrier mobility; insulated gate field effect transistors; SOI MOSFET effective channel mobility; Si-SiO2; back oxide interface; backgate bias; effective electric field; film thickness; fully-depleted n-channel SOI MOSFET; nonzero electric field; Current measurement; Digital circuits; Doping; MOSFET circuits; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Thin film circuits; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.277365
  • Filename
    277365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1052758