• DocumentCode
    1052800
  • Title

    Low-level avalanche multiplication in IGFET´s

  • Author

    Troutman, Ronald R.

  • Author_Institution
    IBM System Products Division, Essex Junction, VT
  • Volume
    23
  • Issue
    4
  • fYear
    1976
  • fDate
    4/1/1976 12:00:00 AM
  • Firstpage
    419
  • Lastpage
    425
  • Abstract
    Results are presented for both theoretical and experimental analyses of low-level avalanche multiplication in an insulated gate field-effect transistor (IGFET). The theoretical model is derived from the ionization integral using a linear field approximation for the electric field at the drain. Experimental multiplication factors are determined by measuring channel and substrate currents. The model is shown to lead to reasonable agreement with data in the range of multiplication factors defined by (Mn- 1) less than unity.
  • Keywords
    Avalanche breakdown; Breakdown voltage; Current measurement; Diodes; Electrons; FETs; Fluid flow measurement; Integrated circuit modeling; P-n junctions; Potential well;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18419
  • Filename
    1478433
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1052800