• DocumentCode
    1052876
  • Title

    Charge-Trapping-Type Flash Memory Device With Stacked High- k Charge-Trapping Layer

  • Author

    Tsai, Ping-Hung ; Chang-Liao, Kuei-Shu ; Liu, Te-Chiang ; Wang, Tien-Ko ; Tzeng, Pei-Jer ; Lin, Cha-Hsin ; Lee, L.S. ; Tsai, Ming-Jinn

  • Author_Institution
    Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu
  • Volume
    30
  • Issue
    7
  • fYear
    2009
  • fDate
    7/1/2009 12:00:00 AM
  • Firstpage
    775
  • Lastpage
    777
  • Abstract
    Operating properties of charge-trapping-type Flash memory devices with single or stacked structures on trapping layer are investigated in this letter. Improved operation and reliability characteristics can be achieved by adapting the stacked high-k films as charge-trapping layer due to the modification in the trap density and the energy level of traps, the mechanism of electron/hole transmission, and the suitable band offset. Moreover, with a small bandgap of second film in the stacked trapping layer, operating characteristics of devices are further enhanced.
  • Keywords
    aluminium compounds; flash memories; hafnium compounds; HfAlO; charge-trapping layer; charge-trapping-type device; electron transmission; flash memory device; hole transmission; stacked high-k films; stacked high-k layer; stacked trapping layer; trap density; $hbox{HfO}_{2}$; Charge-trapping layer; Flash memory; HfAlO; charge-trapping type; stacked;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2022287
  • Filename
    5062298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1052876