Title :
Effect of base profile on the base transit time of the bipolar transistor for all levels of injection
Author_Institution :
Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
fDate :
2/1/1994 12:00:00 AM
Abstract :
Comparing the uniform base profile with the exponential base profile in low injection, the uniform base profile gives a lower base transit time for a given base resistance and peak base concentration, while the exponential base profile gives a lower base transit time for a given base resistance and base width at large base widths. At high injection the uniform base profile always gives the minimum base transit time. The uniform base doping is the optimal base profile for BiCMOS circuits in which the bipolar transistors are operated under high injection
Keywords :
BiCMOS integrated circuits; bipolar transistors; doping profiles; integrated circuit technology; minority carriers; semiconductor device models; semiconductor doping; BiCMOS circuits; BiCMOS logic; base profile; base resistance; base transit time; bipolar transistor; exponential base profile; high injection; injection levels; large base widths; low injection; optimal base profile; peak base concentration; uniform base doping; uniform base profile; BiCMOS integrated circuits; Bipolar transistors; Charge carrier processes; Current density; Cutoff frequency; Doping profiles; Electron mobility; Inverters; Nonuniform electric fields; Photonic band gap;
Journal_Title :
Electron Devices, IEEE Transactions on
