Title :
The performance and reliability of 0.4 micron MOSFET´s with gate oxynitrides grown by rapid thermal processing using mixtures of N2 O and O2
Author :
Okada, Yoshio ; Tobin, Philip J. ; Rushbrook, Peter ; DeHart, William L.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fDate :
2/1/1994 12:00:00 AM
Abstract :
We studied the effect of interfacial nitrogen concentration on device characteristics with gate oxynitrides grown from mixtures of N 2O and O2 by rapid thermal processing. The performance and reliability of MOS capacitors fabricated by a four mask process and MOSFET´s fabricated by a 0.4 μm twin-well process were examined. No degradation of the current drive of n- and p-MOSFET´s in the linear and the saturation region was observed due to oxynitridation. The reliability of gate dielectrics represented by charge-to-breakdown for substrate injection and hot carrier immunity of n-MOSFET´s is improved with increasing interfacial nitrogen concentration
Keywords :
hot carriers; insulated gate field effect transistors; nitridation; oxidation; rapid thermal processing; reliability; 0.4 mum; MOS capacitors; MOSFET; N2O; N2O-O2 mixtures; O2; Si; Si-SiON; charge-to-breakdown; current drive; four mask process; gate oxynitrides; hot carrier immunity; interfacial N concentration; linear region; nMOSFET; pMOSFET; rapid thermal processing; reliability; saturation region; substrate injection; twin-well process; Dielectric devices; Dielectric substrates; Electron traps; Hot carriers; MOS capacitors; MOSFET circuits; Nitrogen; Rapid thermal processing; Substrate hot electron injection; Thermal degradation;
Journal_Title :
Electron Devices, IEEE Transactions on
