• DocumentCode
    1052944
  • Title

    Long-wavelength InAlGaAs VCSELs with Al2O3 embedded current-confinement apertures

  • Author

    Song, H.-W. ; Han, W.S. ; Kim, J. ; Kim, J.-H. ; KoPark, S.-H.

  • Author_Institution
    IT Convergence & Components Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
  • Volume
    42
  • Issue
    14
  • fYear
    2006
  • fDate
    7/6/2006 12:00:00 AM
  • Firstpage
    808
  • Lastpage
    809
  • Abstract
    Long-wavelength InAlGaAs VCSELs with Al2O3 embedded current-confinement structures are reported. Using atomic layer deposition, the current confinement structures are fabricated by depositing Al2O3 on airgap surfaces of undercut apertures, which are formed by laterally etching the active region. 1.57 μm VCSELs showing an output power of over 1 mW and direct modulation characteristics at 4 Gbit/s are reported using these current-confinement apertures.
  • Keywords
    III-V semiconductors; aluminium compounds; atomic layer deposition; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; 1 mW; 1.57 micron; 4 Gbit/s; Al2O3; InAlGaAs; airgap surfaces; atomic layer deposition; current-confinement apertures; embedded current-confinement structures; undercut apertures; vertical-cavity surface-emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20061534
  • Filename
    1661986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1052944