Title :
A light-transmitting two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFT´s integrated on a transparent substrate
Author :
Okamura, Masamichi ; Kimura, Kazuo ; Shirai, Seiiti ; Yamauchi, Noriyoshi
Author_Institution :
NTT Interdisciplinary Res. Labs., Tokyo, Japan
fDate :
2/1/1994 12:00:00 AM
Abstract :
A light-transmitting two-dimensional photodetector array (32×32 cells) using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) thin film transistors (TFT´s) integrated on a transparent substrate has been developed for use in a free-space optical switching network. The fabrication and the characteristics of the photodetector array are discussed. With driving circuits and sensing amplifiers, this photodetector array shows a minimum detectable power of -25 dBm and an insertion loss of 0.4 dB for an incident optical beam with a diameter of 550 μm. By monitoring the positions and the states of input optical beams, this photodetector array can be used to control the optical paths in photonic switching systems, such as a 1024-input-port optical concentrator
Keywords :
amorphous semiconductors; elemental semiconductors; integrated optoelectronics; light transmission; optical fibres; optical switches; p-i-n photodiodes; photodetectors; silicon; switching networks; thin film transistors; 0.4 dB; 1024-input-port optical concentrator; 620 to 690 nm; Si; a-Si pin photodiodes; driving circuits; free-space optical switching network; insertion loss; light-transmitting two-dimensional photodetector; minimum detectable power; photonic switching systems; polysilicon thin film transistors; sensing amplifiers; transparent substrate; Amorphous silicon; Optical arrays; Optical beams; Optical control; Optical films; Optical sensors; PIN photodiodes; Photodetectors; Stimulated emission; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
