DocumentCode
1053009
Title
Improved TRAPATT performance by stabilizing mesa diode surfaces
Author
Kroger, Heikki
Volume
23
Issue
5
fYear
1976
fDate
5/1/1976 12:00:00 AM
Firstpage
519
Lastpage
521
Abstract
Substantial improvement in the reproducibility of extremely efficient S-band TRAPATT diodes is shown to result from sputtering layers of silicon oxynitride onto the exposed surfaces of the mesa diodes. The sputtered layers stabilize the device against changes in dc current-voltage characteristics induced by the TRAPATT mode.
Keywords
Current-voltage characteristics; Degradation; Diodes; Electron traps; Gallium arsenide; Indium phosphide; Monte Carlo methods; Optical scattering; Pulse amplifiers; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18439
Filename
1478453
Link To Document