Title :
Effective defect density for MOS breakdown: Dependence on oxide thickness
Author :
Li, S.P. ; Maserjian, J.
Author_Institution :
California State Polytechnic University, Pomona, CA
fDate :
5/1/1976 12:00:00 AM
Abstract :
A procedure is introduced for measuring an effective density of defects that takes into account time-dependent dielectric breakdown in MOS devices. Measurements are obtained that show a surprising exponential decrease in this density with decreasing oxide thickness.
Keywords :
Area measurement; Breakdown voltage; Density measurement; Dielectric breakdown; Dielectric measurements; Electric breakdown; MOS capacitors; Stress; Temperature; Thickness measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18443
