• DocumentCode
    1053049
  • Title

    High-performance ZnO thin-film transistors fabricated at low temperature on glass substrates

  • Author

    Liu, C.C. ; Chen, Y.S. ; Huang, J.J.

  • Author_Institution
    Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    42
  • Issue
    14
  • fYear
    2006
  • fDate
    7/6/2006 12:00:00 AM
  • Firstpage
    824
  • Lastpage
    825
  • Abstract
    A high-performance enhancement-mode ZnO thin-film transistor (TFT) on a glass substrate is demonstrated. The ZnO thin film is deposited by RF magnetron sputtering with the presence of O2 at low deposition rate and low temperature. The IDS is as high as 1 mA when biased at the saturation region VDS=10-20 V and VGS=5 V without any post-thermal anneal. The Ion/Ioff ratio is 3×106. The results are among the best ZnO TFTs ever obtained.
  • Keywords
    II-VI semiconductors; annealing; glass; sputter deposition; thin film transistors; zinc compounds; 10 to 20 V; 5 V; RF magnetron sputtering; ZnO; post-thermal annealing; thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20061518
  • Filename
    1661996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1053049