Title :
Electronic properties of the silicon-thermally grown tantalum oxide interface
Author :
Revesz, A.G. ; Allison, J.F.
Author_Institution :
COMSAT Laboratories, Clarksburg, MD
fDate :
5/1/1976 12:00:00 AM
Abstract :
MOS capacitance measurements showed that the Si-Ta2O5interface prepared by thermal oxidation at ∼530°C of vacuum deposited Ta film followed by a heat treatment at 350°C in N2-H2is characterized by a negative "oxide" charge (6 × 1011e/cm-2at flat-band) and by an interface state density of ∼ 1 × 1012cm-2(eV)-1. The room temperature instability is small. The breakdown strength is >8 × 106V/cm.
Keywords :
Capacitance; Contracts; Dielectric substrates; Electrons; Interface states; Laboratories; Oxidation; Propulsion; Semiconductor films; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18444
