• DocumentCode
    1053066
  • Title

    Strain enhanced DC-RF performance of 0.13 μm nMOSFETs on flexible plastic substrate

  • Author

    Chin, A. ; Kao, H.L. ; Kao, C.H. ; Liao, C.C. ; Tseng, Y.Y. ; Chi, C.C.

  • Author_Institution
    Dept. of Electron. Eng., Univ. Syst. of Taiwan, Hsinchu, Taiwan
  • Volume
    42
  • Issue
    14
  • fYear
    2006
  • fDate
    7/6/2006 12:00:00 AM
  • Firstpage
    827
  • Lastpage
    829
  • Abstract
    A 14.3% saturation current Id,sat improvement and 0.75 dB minimum noise figure (NFmin) at 10 GHz were measured by applying ∼0.7% tensile strain for 16 finger, 0.13 μm RF MOSFETs with thin-body (40 μm) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90 nm strained-Si nMOSFETs and consistent with device simulations.
  • Keywords
    MOSFET; flexible electronics; plastics; silicon; stress effects; substrates; 0.13 micron; 0.75 dB; 10 GHz; DC-RF MOSFET; Si; flexible plastic substrate; mechanical-strain; nMOSFET; noise figure; polyethylene substrates; saturation current; tensile strain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20061035
  • Filename
    1661998
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1053066