Title :
Strain enhanced DC-RF performance of 0.13 μm nMOSFETs on flexible plastic substrate
Author :
Chin, A. ; Kao, H.L. ; Kao, C.H. ; Liao, C.C. ; Tseng, Y.Y. ; Chi, C.C.
Author_Institution :
Dept. of Electron. Eng., Univ. Syst. of Taiwan, Hsinchu, Taiwan
fDate :
7/6/2006 12:00:00 AM
Abstract :
A 14.3% saturation current Id,sat improvement and 0.75 dB minimum noise figure (NFmin) at 10 GHz were measured by applying ∼0.7% tensile strain for 16 finger, 0.13 μm RF MOSFETs with thin-body (40 μm) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90 nm strained-Si nMOSFETs and consistent with device simulations.
Keywords :
MOSFET; flexible electronics; plastics; silicon; stress effects; substrates; 0.13 micron; 0.75 dB; 10 GHz; DC-RF MOSFET; Si; flexible plastic substrate; mechanical-strain; nMOSFET; noise figure; polyethylene substrates; saturation current; tensile strain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061035
