Self-consistent modeling of resonant interband tunneling in bipolar tunneling field-effect transistors

Author

Bigelow, Jeffrey M. ; Leburton, J.P.

Author_Institution

Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA

Volume

41

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

125

Lastpage

131

Abstract

We present a model for the calculation of the tunneling current in resonant interband tunneling devices based on a transfer-Hamiltonian formalism. The model is fully self-consistent and includes electrons and both light and heavy holes. In particular, we show the viability of the bipolar tunneling field-effect transistor as a three-terminal multiple-NDR device with predicted currents reaching over 1000 A/cm² and theoretical peak-to-valley ratios up to 300

Keywords

bipolar transistors; field effect transistors; negative resistance; resonant tunnelling devices; semiconductor device models; Al_0.3Ga_0.7As-GaAs; Al_0.48In_0.52As-In_0.53Ga_0.47As; bipolar tunneling field-effect transistors; electron sublevel energies; heavy holes; light holes; peak-to-valley ratios; resonant interband tunneling; self-consistent model; three-terminal multiple-NDR device; transfer-Hamiltonian formalism; tunneling current; Charge carrier processes; Diodes; Electrons; FETs; Heterojunctions; Microwave transistors; P-n junctions; Proposals; Resonance; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.277389

Filename

277389