DocumentCode
1053157
Title
Design fabrication of low noise Gunn diode with consideration of a thermocompression bonding effect
Author
Kotani, Michio
Author_Institution
Mitsubishi Electric Corporation, Itami, Hyogo, Japan
Volume
23
Issue
6
fYear
1976
fDate
6/1/1976 12:00:00 AM
Firstpage
567
Lastpage
572
Abstract
In order to reduce 1/f noise generated by Gunn diodes, an experimental study was made on the effects of thermocompression bonding on Gunn oscillator noise. It is found that carrier traps at dislocations introduced into the Gunn diode by the thermocompression process increase the Gunn oscillator noise significantly. An optimum thermocompression bonding condition for minimizing Gunn diode 1/f noise is described, taking into account such parameters as doping density and device area.
Keywords
Bonding; Circuit noise; Electrons; Fabrication; Gunn devices; Microwave oscillators; Noise generators; Noise reduction; Semiconductor device noise; Semiconductor diodes;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18453
Filename
1478467
Link To Document