Title :
Discovery of the tunnel diode
Author_Institution :
IBM T.J. Watson Research Center, Yorktown Heights, NY
fDate :
7/1/1976 12:00:00 AM
Keywords :
Avalanche breakdown; Breakdown voltage; Crystals; Current-voltage characteristics; Diodes; Electric breakdown; Germanium alloys; Impurities; P-n junctions; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18466