Section X-ray topography applied to power device materials problems

X-ray section topographs contain much information about the position of defects inside single crystal slices of silicon. In this paper, the type of information which can be obtained without recourse to the complex dynamic diffraction theory is described. Some examples where section topographs have provided useful information concerning problems in development of power devices are given: bulk defects in silicon starting materials have been studied and shown to be a direct cause of premature electrical breakdown in high power devices. Other examples include determination of the depth of process-induced dislocations and revelation of copper decorated swirls on the crystal growth front.