DocumentCode :
1053721
Title :
A quasi-stationary treatment of the turn-on delay phase of one-dimensional thyristors: Part I—Theory
Author :
Dannhäuser, Friedrich ; Voss, Peter
Author_Institution :
Siemens AG, München, Frankfurter Ring, Germany
Volume :
23
Issue :
8
fYear :
1976
fDate :
8/1/1976 12:00:00 AM
Firstpage :
928
Lastpage :
936
Abstract :
A qualitative discussion of the turn-on delay phase of one-dimensional thyristors is given, taking into account the effect of the charge of the free carriers on the width of the space-charge region. It is shown that in a resistive load circuit the slope of the load current rise goes to infinity for finite values of a critical current density. Along a simple quasi-stationary model the influence of varying voltage, n-base doping, n-base width, and gate current on the load current rise and on the critical current density is discussed quantitatively.
Keywords :
Circuits; Critical current density; Current density; Delay; Doping; Electrons; H infinity control; Quasi-doping; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1976.18511
Filename :
1478524
Link To Document :
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