• DocumentCode
    1053873
  • Title

    Gold–Aluminum Intermetallic Formation Kinetics

  • Author

    Blish, Richard C., II ; Li, Susan ; Kinoshita, Hiroyuki ; Morgan, Sheila ; Myers, Alline F.

  • Author_Institution
    Spansion Inc., Sunnyvale
  • Volume
    7
  • Issue
    1
  • fYear
    2007
  • fDate
    3/1/2007 12:00:00 AM
  • Firstpage
    51
  • Lastpage
    63
  • Abstract
    Au-Al intermetallic compounds (IMC) grow laterally (Al-rich phases) in a Fickian fashion with an activation energy of 1.0 eV, but vertical IMC thickness (Au-rich phases) grows functionally as a power law on time with a sub-Fickian exponent of 1/4, which is substantially smaller than what would be expected for bulk lattice diffusion (1/2). We conclude from the IMC thickness time exponent that an Au-rich IMC growth process is limited by grain boundary diffusion. The best bond lifetime was seen for an intermediate-thickness Al film. The activation energy and lifetime for Au-rich phase growth are each a strong function of wire impurity concentrations. We find that bond lifetime varies roughly as the square root of Pd, Cu, Pt, and As concentrations, but lifetime is not a function of Be, Ca, Fe, or Cr concentration. We find a mixture of and Au on the Al-rich side of the failing interface.
  • Keywords
    aluminium alloys; gold alloys; grain boundary diffusion; integrated circuit bonding; integrated circuit reliability; AuAl; Fickian fashion; activation energy; bond lifetime; bulk lattice diffusion; gold-aluminum intermetallic formation; grain boundary diffusion; growth process; Bonding; Chromium; Gold; Grain boundaries; Impurities; Intermetallic; Iron; Kinetic theory; Lattices; Wire; Integrated circuit bonding; integrated circuit packaging; integrated circuit reliability; life estimation; wire;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2007.891533
  • Filename
    4271481