New two-terminal C-MNOS memory cells

New two-terminal nonvolatile memory cells are proposed, in which an n-channel MNOS transistor is functionally integrated with a p-channel MNOS or MOS transistor. The operational principle of both types of the cells is substantially based on the Λ (lambda)-shaped I-V Characteristic of complementary FET´s. The most valuable feature of the new cells is the unipolar pulse operation of the simple diode-matrix array which can be used in a RAM mode by the use of selective writing and erasing as well as in an electrically alterable PROM mode.