DocumentCode
1053934
Title
A circuit design for the improvement of radiation hardness in CMOS digital circuits
Author
Chen, Chao-Cheng ; Liu, Sow-Chang ; Hsiao, Cheng-Cheng ; Hwu, Jenn-Gwo
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
39
Issue
2
fYear
1992
fDate
4/1/1992 12:00:00 AM
Firstpage
272
Lastpage
277
Abstract
A design consideration for digital CMOS circuits that are almost insensitive to radiation is proposed. By adding three n-MOSFETs to the conventional digital CMOS circuits, good radiation-hard behavior is observed in the inverter, NOR, and NAND gates under SPICE simulation. Detailed circuit design consideration and the simulation results are given
Keywords
CMOS integrated circuits; digital integrated circuits; logic CAD; logic gates; radiation hardening (electronics); NAND gates; NOR gates; SPICE simulation; circuit design; digital CMOS circuits; inverter; n-MOSFETs; radiation hardness; CMOS digital integrated circuits; Chaos; Circuit simulation; Circuit synthesis; Digital circuits; Fabrication; Inverters; MOSFET circuits; SPICE; Threshold voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.277496
Filename
277496
Link To Document