Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers

Author

Babic, D.I. ; Streubel, K. ; Mirin, R.P. ; Margalit, N.M. ; Bowers, J.E. ; Hu, E.L. ; Mars, D.E. ; Long Yang ; Carey, K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

7

Issue

11

fYear

1995

Firstpage

1225

Lastpage

1227

Abstract

We report on the room-temperature continuous-wave operation of vertical-cavity lasers operating at 1.54 μm. The devices use a 7 strain-compensated quantum-well active layer sandwiched between two Al(Ga)As-GaAs quarter-wave mirrors joined by wafer fusion. Five device sizes between 8 and 20 μm were found to operate continuously at room temperature (23/spl deg/C), The lowest room-temperature continuous-wave threshold current of 2.3 mA was measured on an 8-μm diameter device, while the highest continuous-wave operating temperature of 33/spl deg/C was measured on a 12-μm device.

Keywords

III-V semiconductors; compensation; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser mirrors; quantum well lasers; 1.54 mum; 12 mum; 2.3 mA; 23 C; 33 C; Al(Ga)As-GaAs quarter-wave mirrors; AlGaAs-GaAs; InGaAsP; device sizes; room temperature; room-temperature continuous-wave operation; room-temperature continuous-wave threshold current; strain-compensated quantum-well active layer; vertical-cavity lasers; wafer fusion; Costs; Doping; Indium phosphide; Laser fusion; Mars; Mirrors; Optical fiber communication; Quantum well lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.473453

Filename

473453