Trigger sensitivity of transferred electron logic devices

An analysis of the Schottky-barrier gate transferred electron logic devices (TELD´s) is developed which gives the trigger sensitivity in terms of the channel pinchoff voltage, normalized channel depletion width under the gate, device subthreshold transconductance, and the value of the external load resistor. The results presented show that the trigger sensitivity increases with increase in doping density, decrease in channel pinchoff voltage, and decrease in gate reverse bias. Furthermore, for the same material parameters (doping density, channel thickness, etc.) device subthreshold transconductance (gm) improves the trigger sensitivity by a factor (1 + gmRL). Device designs based on this analysis should result in improved device performance.