Lasing characteristics of low-threshold oxide confinement InGaAs-GaAlAs vertical-cavity surface-emitting lasers

Author

Hayashi, Y. ; Mukaihara, T. ; Hatori, N. ; Ohnoki, N. ; Matsutani, Akihiro ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

7

Issue

11

fYear

1995

Firstpage

1234

Lastpage

1236

Abstract

Some lasing characteristics of index-guided InGaAs-GaAlAs vertical-cavity surface-emitting lasers (VCSEL´s) with a native oxide confinement structure, which produced a low threshold current of 70 μA, are presented. It was found that nonradiative recombination was reduced and the estimated surface recombination velocity was almost negligible. The oxidation process was uniform to produce low threshold devices while the oxidation rate was dependent on the doping or composition of DBR´s.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; nonradiative transitions; oxidation; quantum well lasers; surface emitting lasers; surface recombination; 70 muA; DBR composition; InGaAs-GaAlAs; doping; index-guided InGaAs-GaAlAs VCSEL; lasing characteristics; low threshold current; low threshold devices; low-threshold oxide confinement InGaAs-GaAlAs vertical-cavity surface-emitting lasers; native oxide confinement structure; nonradiative recombination; oxidation process; oxidation rate; surface recombination velocity was; Etching; Gallium arsenide; Geometry; Heating; Indium gallium arsenide; Oxidation; Polarization; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.473456

Filename

473456