Limitations of LET in Predicting the Radiation Response of Advanced Devices

Author

Funkhouser, Erik D. ; Weller, Robert A. ; Reed, Robert A. ; Schrimpf, Ronald D. ; Mendenhall, Marcus H. ; Asai, Makoto

Author_Institution

Dept. of Electr. Engineeringand Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

Volume

62

Issue

4

fYear

2015

fDate

Aug. 2015

Firstpage

1558

Lastpage

1567

Abstract

The impact of high-Z metals on energy deposition in thin volumes due to direct ionization by ions in space environments is examined. The importance of energy loss straggling in small volumes typical of those found in advanced devices is also evaluated. It is found that direct ionization by protons over a large energy range may contribute significantly to error rates in advanced silicon on insulator devices due to energy loss straggling. This improves on conventional event rate analysis based on linear energy transfer, which does not describe the contributions of direct ionization by protons to the error rate.

Keywords

integrated circuit modelling; ionisation; radiation effects; silicon-on-insulator; space vehicle electronics; LET; Si; advanced silicon on insulator devices; direct ionization; energy deposition; energy loss; event rate analysis; high-Z metals; linear energy transfer; radiation response; space environments; Energy loss; Ionization; Protons; Silicon; Tungsten; Hardness-assurance; Monte Carlo simulation; linear energy transfer (LET) enhancement; radiation effects; single event effects; straggling;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2015.2429579

Filename

7128416